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IC-CAP (Integrated Circuit Characterization and Analysis Program) is a device modeling program that provides powerful characterization and analysis capabilities for a broad range of semiconductor modeling processes.
IC-CAP offers device engineers and circuit designers advanced modeling software for device modeling including instrument control, data acquisition, graphical analysis, simulation, optimization, and statistical analysis.
Using the IC-CAP Platform with IC-CAP Extraction Packages combines the power and flexibility of the platform with an automated procedure to measure and extract a particular model. See links below to specific IC-CAP Extraction Packages. Additional extraction packages are also available directly from third-party companies.
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Click on the following links for complete information.
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Product Information
Why choose IC-CAP? - Superior combination of Extraction and Measurement
- Efficient, open, and flexible software environment and extraction methodologies.
- Turnkey extraction modules that can be customized to your particular.
- Create custom models from the device up.
- Capable of linking to the most commonly used industry device and circuit simulators.
- Complete DC to RF extraction routines for state-of-the-art industry standard models.
- EEsof's s commitment to supporting future model standards with a complete extraction solutions (UI, model, extraction flow).
- IC-CAP supports the latest Compact Modeling Council's standard models.
- Easy-to-use window-style user interface.
- IC-CAP environment allows convenient handling and interaction with large and varied extraction data.
- Commonly used plots can be group into a single window with Multiplot Studio.
- Open interface to variety of measurement instruments and simulators.
- IC-CAP focus on providing instrument drivers for the latest device modeling hardware instrumentation (DC, CV, RF, flicker noise).
- Online resource for recommended measurement systems.
- Knowing you have the best extraction results.
- Live worldwide support call centers, online resources and training.
- The most flexible and accurate modeling environment available for the device modeling world.
Complete, Accurate and Efficient Parameter Extraction Environment
IC-CAP operates in an open and flexible software architecture. All setups and macros are open for user modifications. Using Parameter Extraction Language you can build your own models or extraction methodologies directly into IC-CAP. IC-CAP open measurement interface allows you to write your own measurement drivers to control instruments using user C language.
Together with our modeling system configurations, IC-CAP offers a complete, integrated modeling solution for today's semiconductor industry.
IC-CAP Components and Features
The device modeling world comprises a wide variety of technologies. Each having its own particular application focus. Agilent EEsof provides complete model extraction solutions that provide you with convenient user interfaces, exact models and extraction methodologies.
IC-CAP actively supports the following types of models:
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- FET
- HEMT
- Custom model developments
- 1/f Noise
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CMOS Modeling with IC-CAP
IC-CAP's CMOS Model Extraction Packages provide step-by-step procedures for measurement and direct extraction of DC and RF Model Parameters. The packages provide separate modules for measurement and extraction. The packages are customizable to enable you to easily produce a model that will accurately represent your device process.
Click on the following for links for more information:
Other IC-CAP modeling packages include:
Demonstrated Measurement Expertise
Device modeling is more than just a model extraction software program. Modeling first starts with measurements that accurately characterize your particular device.
IC-CAP provides the capability to communicate and control the latest in precision DC, CV, and S-parameter instrumentation. Using one of the Agilent EEsof recommended hardware configurations enables you to directly use IC-CAP to control both RF and DC device measurements. The final product is a measurement data set that is ready for extraction directly in IC-CAP.
The Agilent EEsof EDA DC and RF modeling has a long history of expertise that is built into the IC-CAP Modeling Software environment and modeling system configurations, thus making them the tools of choice for many engineers who are involved in key device modeling roles.
Click on the following links for more information:
For More Information ...
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Product Documentation
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Ordering and Configuration
How To Buy
To request immediate sales assistance - for help choosing the best system; for product configuration and integration details; to request telephone assistance or an on-site demo of the software; or to request a price quotation - click on the following link:
Configuration Details
Agilent EEsof EDA offers a complete range of hardware and software modeling solutions, and both technical and sales help is available.
Click on the following links for details on configuring an IC-CAP parameter extraction and device modeling system, and for a description of the extraction modules that are available.
Related Products
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Product Literature
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Online Demos
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Publications and Papers
Articles
- Joe Civello, Addressing the challenges of RF device modeling for successful high-frequency design, Microwave Engineering Europe, December 2003/January 2004. Current issue: Microwave Engineering Europe.
- Frederic Hameau and Olivier Rozeau, CEA/LETI, Radio-Frequency Circuits Integration Using CMOS SOI 0.25 µm Technology (PDF, 436 KB). 6-page technical paper.
- Frederic Hameau and Olivier Rozeau, CEA/LETI, Radio-Frequency Circuits Integration Using CMOS SOI 0.25 µm Technology (PDF, 1.7 MB). 30 slides.
- C. Y. Su, et al., An Automatic Macro Program for Radio Frequency MOSFET Characteristics Analysis, Microwave Journal, October 2001. PDF Version (109 KB). Current issue: Microwave Journal.
- Tzung-Yin Lee, et al., A Scaleable Model Generation Methodology of Bipolar Transistors for RF IC Design (PDF, 205 KB). 4-page technical paper presented at the 2001 IEEE Bipolar/BICMOS Circuits and Technology Meeting, Minneapolis, Minnesota, USA, 2 October 2001.
- Dr. Franz Sischka, Applying Nonlinear RF Device Modeling To Verify S-Parameter Linearity (PDF, 386 KB). 17-page technical paper. European Microwave Week, September 2001.
- Mark Dunn and Bob Schaefer, Isothermal Measurements and Modeling with Pulsed Modeling System (PDF, 1.5 MB)
- Dr. Franz Sischka, Advanced Nonlinear Device Modeling Beyond Linear S-parameters (PDF, 390 KB)
- Dan Stoneking, Agilent Technologies, Improving the manufacturability of electronic designs, IEEE Spectrum, June 1999.
IC-CAP User's Conference Papers
- Dr. Klaus Kelting, Infineon Technologies AG, Munich, Germany, Parameter Extraction Using IC-CAP 5.3 (PDF, 1.5 MB)
- Dr. Andries Scholten, et al., Philips Research Laboratories, Eindhoven, The Netherlands, RF CMOS Parameter Extraction and Model Verification Using IC-CAP (PDF, 1.3 MB)
- Roberto Tinti, et al., 1/f Noise Parameter Extraction and Measurement System Solution (PDF, 570 KB)
- Dr. Fujiang Lin, et al., Extraction of VBIC Model for SiGe HBTs Made Easy by Going Through Gummel-Poon Model (PDF, 2.0 MB)
Customer Comments and Success Stories
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